Laser-generated ns plasma pulses characterized using SiC Schottky diode
Funding information: CANAMinfrastructure LM 2015056, project GACR 19-02482S., GACR 19-02482S.
Abstract
The nonequilibrium plasma generated by nanosecond laser pulse is characterized using a SiC detector connected in time-of-flight configuration to measure the radiations emitted from the plasma. Different metallic targets were irradiated by the pulsed laser at an intensity of 1010 W/cm2 and 200 mJ pulse energy. The SiC allows detecting ultraviolet radiations and soft X-rays, electrons, and ions. The obtained plasma has a temperature of the order of tens to hundreds eV depending on the atomic number of the irradiated target and ion accelerations of the order of 100 eV per charge state.